封装尺寸 (mm)
规格:
注：此参数为单芯片参数，产品为4芯片并联，工作电流*4
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Threshold Current | Ith | T=25°C | 0.5 | A | ||
| Operating Voltage | VF | T=25°C，Iop=3.0A | 2.0 | V | ||
| Series Resistance | Rs | T=25°C，Slope=20-80% | 0.3 | Ω | ||
| Slope Efficiency | η | T=25°C，Slope=20-80% | 0.85 | W/A | ||
| Output Power | LOP | T=25°C, I=3.0A | 2.0 | W | ||
| Beam Divergence | 2θ1/2 | T=25°C, I=2.4A | 22 | deg. | ||
| Spectral width | Po | T=25-85°C, I=2.4A | 1.5 | nm | ||
| Peak Wavelength | λp | T=25-85°C, I=3.0A | 840 | 850 | 860 | nm |
| Wavelength Shift | dλ/dT | 0.07 | nm/°C | |||
| Conversion efficiency | PCE | T=25°C | 36 | % |
